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MOSFETS

PACKAGE: TO-72
Part Package
Breakdown V Min
IGSS (pA) Max
IDSS (nA) Max
VGS (V) Min
VGS (V) Max
RDS (on) (Ohm) Max
Comments
Channel
2N4351 TO-72 25 10 10     300 High Gain, Low Capacitance N-Channel Enhancement Mode
2N4352 TO-72 -25 ± 10 -10     600 High Gain, Low Capacitance P-Channel Enhancement Mode
3N161 TO-72 -25   -10 -4.5 -8   Diode Protected P-Channel Enhancement Mode
3N163 TO-72 -40 -10 0.2 -2.5 -6.5 250 Very High Input Impedance P-Channel Enhancement Mode
3N164 TO-72 -30 -10 0.4 -2.5 -6.5 300 Very High Input Impedance P-Channel Enhancement Mode
3N170 TO-72 25 ± 10 10     200 Low Switching Voltages N-Channel Enhancement Mode
3N171 TO-72 25 ± 10 10     200 Low Switching Voltages N-Channel Enhancement Mode
3N172 TO-72 -40 -200 -0.4 -3 -6.5 250 High Imput Impedance, Diode Protected P-Channel Enhancement Mode
3N173 TO-72 -30 -500 -10 -2.5 -6.5 350 High Imput Impedance, Diode Protected P-Channel Enhancement Mode

PACKAGE: TO-99
Part Package
Breakdown V Min
IDSS (nA) Max
VGS (V) Min
VGS (V) Max
RDS (on) (Ohm) Max
Comments
Channel
3N165 TO-99 40 -0.2     300 Very High Impedance P-Channel Enhancement Mode
3N166 TO-99 30 -0.2     300 Very High Impedance P-Channel Enhancement Mode
3N190 TO-99 -40 -0.2 -3 -6.5 300 Very High Input Impedance Dual P-Channel Enhancement Mode
3N191 TO-99 -40 -0.2 -3 -6.5 300 Very High Input Impedance Dual P-Channel Enhancement Mode

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